Phase diagram of the one-dimensional extended attractive Hubbard model for large nearest-neighbor repulsion

We consider the extended Hubbard model with attractive on-site interaction U and nearest-neighbor repulsions V. We construct an effective Hamiltonian H_{eff} for hopping t<<V and arbitrary U<0. Retaining the most important terms, H_{eff} can be mapped onto two XXZ models, solved by the Bethe ansatz. The quantum phase diagram shows two Luttinger liquid phases and a region of phase separation between them. For density n<0.422 and U<-4, singlet superconducting correlations dominate at large distances. For some parameters, the results are in qualitative agreement with experiments in BaKBiO.Comment: 6 pages, 3 figures, submitted to Phys. Rev.

Resonant thermal transport in semiconductor barrier structures

I report that thermal single-barrier (TSB) and thermal double-barrier (TDB) structures (formed, for example, by inserting one or two regions of a few Ge monolayers in Si) provide both a suppression of the phonon transport as well as a resonant-thermal-transport effect. I show that high-frequency phonons can experience a traditional double-barrier resonant tunneling in the TDB structures while the formation of Fabry-Perot resonances (at lower frequencies) causes quantum oscillations in the temperature variation of both the TSB and TDB thermal conductances $\sigma_{\text{TSB}}$ and $\sigma_{\text{TDB}}$.Comment: 4 pages. 4 figure.

An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

The Landauer approach provides a conceptually simple way to calculate the intrinsic thermoelectric (TE) parameters of materials from the ballistic to the diffusive transport regime. This method relies on the calculation of the number of propagating modes and the scattering rate for each mode. The modes are calculated from the energy dispersion (E(k)) of the materials which require heavy computation and often supply energy relation on sparse momentum (k) grids. Here an efficient method to calculate the distribution of modes (DOM) from a given E(k) relationship is presented. The main features of this algorithm are, (i) its ability to work on sparse dispersion data, and (ii) creation of an energy grid for the DOM that is almost independent of the dispersion data therefore allowing for efficient and fast calculation of TE parameters. The inclusion of scattering effects is also straight forward. The effect of k-grid sparsity on the compute time for DOM and on the sensitivity of the calculated TE results are provided. The algorithm calculates the TE parameters within 5% accuracy when the K-grid sparsity is increased up to 60% for all the dimensions (3D, 2D and 1D). The time taken for the DOM calculation is strongly influenced by the transverse K density (K perpendicular to transport direction) but is almost independent of the transport K density (along the transport direction). The DOM and TE results from the algorithm are bench-marked with, (i) analytical calculations for parabolic bands, and (ii) realistic electronic and phonon results for $Bi_{2}Te_{3}$.Comment: 16 Figures, 3 Tables, submitted to Journal of Computational electronic

Numerical study of the thermoelectric power factor in ultra-thin Si nanowires

Low dimensional structures have demonstrated improved thermoelectric (TE) performance because of a drastic reduction in their thermal conductivity, {\kappa}l. This has been observed for a variety of materials, even for traditionally poor thermoelectrics such as silicon. Other than the reduction in {\kappa}l, further improvements in the TE figure of merit ZT could potentially originate from the thermoelectric power factor. In this work, we couple the ballistic (Landauer) and diffusive linearized Boltzmann electron transport theory to the atomistic sp3d5s*-spin-orbit-coupled tight-binding (TB) electronic structure model. We calculate the room temperature electrical conductivity, Seebeck coefficient, and power factor of narrow 1D Si nanowires (NWs). We describe the numerical formulation of coupling TB to those transport formalisms, the approximations involved, and explain the differences in the conclusions obtained from each model. We investigate the effects of cross section size, transport orientation and confinement orientation, and the influence of the different scattering mechanisms. We show that such methodology can provide robust results for structures including thousands of atoms in the simulation domain and extending to length scales beyond 10nm, and point towards insightful design directions using the length scale and geometry as a design degree of freedom. We find that the effect of low dimensionality on the thermoelectric power factor of Si NWs can be observed at diameters below ~7nm, and that quantum confinement and different transport orientations offer the possibility for power factor optimization.Comment: 42 pages, 14 figures; Journal of Computational Electronics, 201

First-principles study of Se-intercalated graphite

Se-intercalated graphite compounds (Se-GICs) are considered as promising candidates for room-temperature thermoelectric cooling devices. Here the authors analyze the crystallographic structure and electronic properties of these materials within the framework of density-functional theory. First, the Adaptive-Coordinate Real-space Electronic Structure (ACRES) code is used to determine the stable structure of a representative stage-2 Se-GIC by relaxing atomic positions. The stable configuration is found to be a pendant-type structure, in which each selenium is bonded covalently to two atoms within the same carbon layer, causing a local distortion of the in-plane conjugation of the graphite. Then, they use the full potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structure of the material and discuss its properties. Near the Fermi energy E{sub F}, there are wide bands originating from the host graphitic electronic structure and a few very narrow bands mainly of Se 4p character. The latter bands contribute to high peaks in the density of states close to E{sub F}. They show that this feature, although typical of many good thermoelectrics, does not necessarily imply high thermopower in the case of Se-GICs